Infineon ISC16DP15LMATMA1

Infineon · FETs & Power MOSFETs · MPN ISC16DP15LMATMA1

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)22A
Output Capacitance(Coss)180pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation188W
RDS(on)134mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 P-Channel
Input Capacitance(Ciss)4.6nF
TypeP-Channel

Technical details

P-Channel 150V SMD,9.1x6.9mm

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