Infineon · FETs & Power MOSFETs · MPN ISC16DP15LMATMA1
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 22A |
| Output Capacitance(Coss) | 180pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 188W |
| RDS(on) | 134mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.6nF |
| Type | P-Channel |
P-Channel 150V SMD,9.1x6.9mm