Infineon · FETs & Power MOSFETs · MPN ISC151N20NM6ATMA1
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| Gate Charge(Qg) | 47nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 490pF |
| Current - Continuous Drain(Id) | 74A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 15.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.1nF |
| Type | N-Channel |
200V 74A 4.5V 200W 15.1mΩ@10V 1 N-channel N-Channel TDSON-8(5x5.9) Single FETs, MOSFETs RoHS