Infineon · FETs & Power MOSFETs · MPN ISC110N12NM6ATMA1
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| Output Capacitance(Coss) | 330pF |
|---|---|
| Pd - Power Dissipation | 94W |
| Configuration | - |
| Gate Charge(Qg) | 15.4nC |
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| RDS(on) | 9.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
94W 120V 3.1V 9.8mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS