Infineon · FETs & Power MOSFETs · MPN ISC0806NLSATMA1
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 49nC@10V |
| Output Capacitance(Coss) | 560pF |
| Current - Continuous Drain(Id) | 97A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 7.1mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.4nF |
| Type | N-Channel |
100V 97A 2.3V 96W 7.1mΩ@4.5V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS