Infineon ISC0805NLSATMA1

Infineon · FETs & Power MOSFETs · MPN ISC0805NLSATMA1

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Specifications

Gate Charge(Qg)16nC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)10.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.2nF
TypeN-Channel

Technical details

N-Channel 100V 71A 74W Surface Mount TDSON-8

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