Infineon · FETs & Power MOSFETs · MPN ISC0804NLSATMA1
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| Gate Charge(Qg) | 9.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 10.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
100V 59A 2.3V 2.5W 10.9mΩ@10V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS