Infineon · FETs & Power MOSFETs · MPN ISC0803NLSATMA1
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| Gate Charge(Qg) | 7.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 43W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 16.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
| Type | N-Channel |
100V 37A 2.3V 43W 16.9mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS