Infineon · FETs & Power MOSFETs · MPN ISC0802NLSATMA1
No reviews yet — be the first to review Infineon ISC0802NLSATMA1.
| Gate Charge(Qg) | 29nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 610pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 3.3mΩ@10V;4.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
| Type | N-Channel |
N-Channel 100V 150A 125W Surface Mount TDSON-8