Infineon · FETs & Power MOSFETs · MPN ISC079N15NM6ATMA1
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 95A |
| Output Capacitance(Coss) | 910pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 165W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.9nF |
| Type | N-Channel |
150V 95A 4V 165W 7.9mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS