Infineon · FETs & Power MOSFETs · MPN ISC078N12NM6ATMA1
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| Drain to Source Voltage | 120V |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Output Capacitance(Coss) | 600pF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 7.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
120V 85A 3.6V 125W 7.8mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS