Infineon ISC0603NLSATMA1

Infineon · FETs & Power MOSFETs · MPN ISC0603NLSATMA1

No reviews yet — be the first to review Infineon ISC0603NLSATMA1.

Specifications

Drain to Source Voltage80V
Gate Charge(Qg)9.2nC@4.5V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)8.4pF
RDS(on)8.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

N-Channel 80V 56A 52W Surface Mount TDSON-8

Related FETs & Power MOSFETs