Infineon ISC046N04NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC046N04NM5ATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)21nC@10V
Output Capacitance(Coss)530pF
Current - Continuous Drain(Id)77A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)4.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF
TypeN-Channel

Technical details

40V 77A 3.4V 50W 4.6mΩ@10V 1 N-channel N-Channel TDSON-8FL Single FETs, MOSFETs RoHS

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