Infineon ISC044N15NM6ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC044N15NM6ATMA1

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)156A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)3.5mΩ@15V
Number1 N-channel
Input Capacitance(Ciss)3.9nF
TypeN-Channel

Technical details

150V 156A 3.5V 250W 3.5mΩ@15V 1 N-channel N-Channel SON-8(5x6) Single FETs, MOSFETs RoHS

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