Infineon ISC037N12NM6ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC037N12NM6ATMA1

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)46nC@10V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)163A
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

N-Channel 120V 163A 214W Surface Mount TDSON-8

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