Infineon · FETs & Power MOSFETs · MPN ISC035N10NM5LF2ATMA1
No reviews yet — be the first to review Infineon ISC035N10NM5LF2ATMA1.
| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 164A |
| Output Capacitance(Coss) | 1nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.9V |
| Pd - Power Dissipation | 217W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.2nF |
| Type | N-Channel |
100V 164A 3.9V 217W 3.5mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS