Infineon · FETs & Power MOSFETs · MPN ISC032N12LM6ATMA1
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| Output Capacitance(Coss) | 1nF |
|---|---|
| Pd - Power Dissipation | 211W |
| Configuration | - |
| Gate Charge(Qg) | 33nC |
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.4nF |
211W 120V 1.7V 2.8mΩ@10V 1 N-channel N-Channel PG-TDSON-8FL Single FETs, MOSFETs RoHS