Infineon ISC030N10NM6ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC030N10NM6ATMA1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)69nC@10V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)179A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation208W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.2nF
TypeN-Channel

Technical details

N-Channel 100V 179A 208W Surface Mount TDSON-8FL

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