Infineon · FETs & Power MOSFETs · MPN ISC022N10NM6ATMA1
No reviews yet — be the first to review Infineon ISC022N10NM6ATMA1.
| Gate Charge(Qg) | 91nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 230A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 254W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 2.24mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.88nF |
N-Channel 100V 230A 254W Surface Mount TSON-8