Infineon · FETs & Power MOSFETs · MPN ISC019N04NM5ATMA1
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.4nF |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
| Type | N-Channel |
40V 170A 3.4V 100W 1.9mΩ@10V 1 N-channel N-Channel TDSON-8FL Single FETs, MOSFETs RoHS