Infineon ISC017N04NM5ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC017N04NM5ATMA1

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)67nC@10V
Output Capacitance(Coss)2.2nF
Current - Continuous Drain(Id)193A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)1.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.8nF
TypeN-Channel

Technical details

N-Channel 40V 193A 115W Surface Mount TDSON-8FL

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