Infineon · FETs & Power MOSFETs · MPN ISC015N06NM5LF2ATMA1
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| Output Capacitance(Coss) | 1.3nF |
|---|---|
| Pd - Power Dissipation | 217W |
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 90nC |
| Configuration | - |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.9nF |
217W 60V 3V 1.3mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS