Infineon · FETs & Power MOSFETs · MPN ISC012N04LM6ATMA1
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Current - Continuous Drain(Id) | 238A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 1.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.6nF |
40V 238A 1.6V 3W 1.2mΩ@10V 1 N-channel SON-8(5x6) Single FETs, MOSFETs RoHS