Infineon · FETs & Power MOSFETs · MPN ISC010N06NM5ATMA1
No reviews yet — be the first to review Infineon ISC010N06NM5ATMA1.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 143nC@10V |
| Output Capacitance(Coss) | 2.3nF |
| Current - Continuous Drain(Id) | 330A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 1.05mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
| Type | N-Channel |
60V 330A 3.3V 214W 1.05mΩ@10V 1 N-channel N-Channel TSON-8-EP(5x6) Single FETs, MOSFETs RoHS