Infineon ISC009N06LM5ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC009N06LM5ATMA1

No reviews yet — be the first to review Infineon ISC009N06LM5ATMA1.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)209nC@10V
Output Capacitance(Coss)2nF
Current - Continuous Drain(Id)348A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)0.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13nF
TypeN-Channel

Technical details

N-Channel 60V 348A 3W Surface Mount TDSON-8

Related FETs & Power MOSFETs