Infineon ISC007N04NM6ATMA1

Infineon · FETs & Power MOSFETs · MPN ISC007N04NM6ATMA1

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Specifications

Gate Charge(Qg)117nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2.7nF
Current - Continuous Drain(Id)269A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation188W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)0.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.4nF
TypeN-Channel

Technical details

N-Channel 40V 269A 188W Surface Mount TDSON-8FL

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