Infineon IRLS3813PBF

Infineon · FETs & Power MOSFETs · MPN IRLS3813PBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)55nC@4.5V
Output Capacitance(Coss)1.25nF
Current - Continuous Drain(Id)247A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation195W
Reverse Transfer Capacitance (Crss@Vds)570pF
RDS(on)1.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.02nF
TypeN-Channel

Technical details

30V 247A 2.35V 195W 1.95mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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