Infineon IRLR8729PBF

Infineon · FETs & Power MOSFETs · MPN IRLR8729PBF

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)16nC@4.5V
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation55W
RDS(on)11.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

30V 58A 2.35V 55W 11.9mΩ@4.5V 1 N-channel N-Channel DPAK(TO-252AA) Single FETs, MOSFETs RoHS

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