Infineon IRLR8259PBF

Infineon · FETs & Power MOSFETs · MPN IRLR8259PBF

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage25V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)57A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)8.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

25V 57A 2.35V 48W 8.7mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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