Infineon IRLR8103VPBF-IR

Infineon · FETs & Power MOSFETs · MPN IRLR8103VPBF-IR

No reviews yet — be the first to review Infineon IRLR8103VPBF-IR.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)27nC@5V
Output Capacitance(Coss)1.064nF
Current - Continuous Drain(Id)91A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)109pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.672nF
TypeN-Channel

Technical details

30V 91A 3V 115W 9mΩ@10V 1 N-channel N-Channel DPAK(TO-252AA) Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs