Infineon IRLR8103V

Infineon · FETs & Power MOSFETs · MPN IRLR8103V

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Specifications

Gate Charge(Qg)27nC@5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)91A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)109pF
RDS(on)10.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.672nF
TypeN-Channel

Technical details

30V 91A 1V 115W 10.5mΩ@4.5V 1 N-channel N-Channel DPAK Single FETs, MOSFETs

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