Infineon IRLR3636TRPBF

Infineon · FETs & Power MOSFETs · MPN IRLR3636TRPBF

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Specifications

Gate Charge(Qg)49nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation143W
RDS(on)6.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.779nF

Technical details

N-Channel 60V 50A 143W Surface Mount TO-252

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