Infineon · FETs & Power MOSFETs · MPN IRLR3636PBF
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| Gate Charge(Qg) | 49nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 99A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 143W |
| RDS(on) | 8.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.779nF |
60V 99A 2.5V 143W 8.3mΩ@4.5V 1 N-channel DPAK Single FETs, MOSFETs RoHS