Infineon · FETs & Power MOSFETs · MPN IRLR3410PBF
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| Gate Charge(Qg) | 34nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 155mΩ@4V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
| Type | N-Channel |
100V 17A 2V 79W 155mΩ@4V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS