Infineon IRLR3410PBF

Infineon · FETs & Power MOSFETs · MPN IRLR3410PBF

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Specifications

Gate Charge(Qg)34nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)155mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)800pF
TypeN-Channel

Technical details

100V 17A 2V 79W 155mΩ@4V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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