Infineon IRLR2908PBF

Infineon · FETs & Power MOSFETs · MPN IRLR2908PBF

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)33nC
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.89nF
TypeN-Channel

Technical details

80V 39A 2.5V 120W 28mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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