Infineon IRLR120NPBF

Infineon · FETs & Power MOSFETs · MPN IRLR120NPBF

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)20nC
Output Capacitance(Coss)97pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)185mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)440pF
TypeN-Channel

Technical details

100V 10A 2V 48W 185mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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