Infineon IRLMS5703TRPBF

Infineon · FETs & Power MOSFETs · MPN IRLMS5703TRPBF

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)89pF
Current - Continuous Drain(Id)2.4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))325mV
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)180mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)170pF
TypeP-Channel

Technical details

30V 2.4A 325mV 1.7W 180mΩ@10V 1 P-Channel P-Channel SOT-23-6 Single FETs, MOSFETs

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