Infineon IRLH5030TRPBF

Infineon · FETs & Power MOSFETs · MPN IRLH5030TRPBF

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Specifications

Gate Charge(Qg)94nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.6W;156W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.185nF

Technical details

N-Channel 100V 3.6W 156W Surface Mount PQFN-8(5x6)

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