Infineon IRLB8314PBF

Infineon · FETs & Power MOSFETs · MPN IRLB8314PBF

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Specifications

Gate Charge(Qg)40nC@15V
Drain to Source Voltage30V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)500pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.05nF

Technical details

N-Channel 30V 130A 125W Through Hole TO-220AB

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