Infineon IRLB4030PBF

Infineon · FETs & Power MOSFETs · MPN IRLB4030PBF

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Specifications

Gate Charge(Qg)130nC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)670pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation370W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)11.36nF
TypeN-Channel

Technical details

N-Channel 100V 180A 370W Through Hole TO-220AB

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