Infineon IRLB3813PBF

Infineon · FETs & Power MOSFETs · MPN IRLB3813PBF

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Specifications

Gate Charge(Qg)57nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.62nF
Current - Continuous Drain(Id)260A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)650pF
RDS(on)1.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.42nF
Type-

Technical details

N-Channel 30V 260A 230W Through Hole ITO-220AB-3

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