Infineon · FETs & Power MOSFETs · MPN IRL8114PBF
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| Gate Charge(Qg) | 29nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.35V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.66nF |
30V 120A 1.35V 115W 3.5mΩ@10V 1 N-channel TO-220AB-3 Single FETs, MOSFETs RoHS