Infineon IRL8114PBF

Infineon · FETs & Power MOSFETs · MPN IRL8114PBF

No reviews yet — be the first to review Infineon IRL8114PBF.

Specifications

Gate Charge(Qg)29nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.35V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.66nF

Technical details

30V 120A 1.35V 115W 3.5mΩ@10V 1 N-channel TO-220AB-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs