Infineon IRL8113PBF-IR

Infineon · FETs & Power MOSFETs · MPN IRL8113PBF-IR

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)23nC@4.5V
Output Capacitance(Coss)620pF
Current - Continuous Drain(Id)105A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.84nF
TypeN-Channel

Technical details

30V 105A 2.25V 110W 6mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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