Infineon IRL6372TRPBF

Infineon · FETs & Power MOSFETs · MPN IRL6372TRPBF

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Specifications

Current - Continuous Drain(Id)8.1A
RDS(on)17.9mΩ@4.5V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)68pF
Number2 N-Channel
Input Capacitance(Ciss)1.02nF
Gate Charge(Qg)11nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 8.1A 2W Surface Mount SO-8

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