Infineon · FETs & Power MOSFETs · MPN IRL60HS118
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| Gate Charge(Qg) | 5.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 18.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 11.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 17mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
60V 18.5A 11.5W 17mΩ@10V 1 N-channel PQFN-6-EP(2x2) Single FETs, MOSFETs RoHS