Infineon IRL60B216

Infineon · FETs & Power MOSFETs · MPN IRL60B216

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Specifications

Gate Charge(Qg)258nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.26nF
Current - Continuous Drain(Id)305A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)880pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.57nF
Vgs±20V

Technical details

N-Channel 60V 305A 375W Through Hole TO-220AB

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