Infineon IRL530NSTRRPBF

Infineon · FETs & Power MOSFETs · MPN IRL530NSTRRPBF

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Specifications

Gate Charge(Qg)34nC@5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3.8W;79W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

100V 17A 2V 100mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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