Infineon IRL2910STRRPBF

Infineon · FETs & Power MOSFETs · MPN IRL2910STRRPBF

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Specifications

Gate Charge(Qg)140nC@5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)330pF
RDS(on)26mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.7nF

Technical details

100V 55A 1V 200W 26mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS

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