Infineon IRL100HS121

Infineon · FETs & Power MOSFETs · MPN IRL100HS121

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Specifications

Gate Charge(Qg)3.7nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation11.5W
Reverse Transfer Capacitance (Crss@Vds)6.3pF
RDS(on)42mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)440pF

Technical details

N-Channel 100V 11A 11.5W Surface Mount PQFN-6-EP(2x2)

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