Infineon IRL1004PBF

Infineon · FETs & Power MOSFETs · MPN IRL1004PBF

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Specifications

Gate Charge(Qg)100nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)320pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.33nF

Technical details

N-Channel 40V 130A 200W Through Hole TO-220AB

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