Infineon IRG7PH35UD-EP

Infineon · Thyristors & Power Discretes · MPN IRG7PH35UD-EP

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Specifications

Td(off)160ns
Pd - Power Dissipation180W
Td(on)30ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)50A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)-
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V;6V
Vce Saturation(VCE(sat))1.9V
Collector Cut-Off Current (Ices)2uA
Reverse Recovery Time(trr)105ns

Technical details

180W 50A 1.2kV TO-247-3 Single IGBTs RoHS

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