Infineon · Thyristors & Power Discretes · MPN IRG7PH35UD-EP
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| Td(off) | 160ns |
|---|---|
| Pd - Power Dissipation | 180W |
| Td(on) | 30ns |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3V;6V |
| Vce Saturation(VCE(sat)) | 1.9V |
| Collector Cut-Off Current (Ices) | 2uA |
| Reverse Recovery Time(trr) | 105ns |
180W 50A 1.2kV TO-247-3 Single IGBTs RoHS